2015-10

CRYSTAL GROWTH

Züchten von Kristallen

Выращивание кристаллов


Worldwide collection of published applications from PCT, US, EP, DE

1.  HEAT SHIELD COOLING APPARATUS FOR INGOT GROWING DEVICE USING WATER-COOLED TUBE

The present invention relates to a heat shield cooling apparatus of an ingot growing device using a water-cooled tube, the apparatus comprising: a heat shield installed on the top of a crucible of an ingot growing device; and a water-cooled tube of a cooling apparatus which is in surface contact with the surface of the heat shield and in which a cooling water forcedly circulates, wherein the heat shield comprises: an inner shield and an outer cover which consist of graphite having excellent heat resistance and heat conductivity; and an insulation disposed between the inner shield and the outer cover, to thereby be able to efficiently emit the high-temperature heat energy radiated from the ingot (S) and reduce the ingot pulling speed such that the productivity (yield) can significantly increase.

Publication: WO2015147367A1  Load Full Document from Espacenet (PDF)

Applicant(s): TECH CO LTD S [KR]

Inventor(s): PARK JIN SUB [KR], KIM JIN NO [KR], LEE KYUNG SEOK [KR], LEE SUNG HO [KR] and others ...

Priority: 26.03.2014    KR20140035219

Application: 18.04.2014    WO2014KR03419

IPC Classification: C30B 15/00


2.  APPARATUS FOR CONTROLLING HEAT FLOW WITHIN A SILICON MELT

An apparatus for controlling heat flow within a melt. The apparatus may include a crucible configured to contain the melt where the melt has an exposed surface. The apparatus may also include a heater disposed below a first side of the crucible and configured to supply heat through the melt to the exposed surface, and a heat diffusion barrier assembly comprising at least one heat diffusion barrier disposed within the crucible and defining an isolation region in the melt and an outer region in the melt.

Publication: WO2015148181A1  Load Full Document from Espacenet (PDF)

Applicant(s): VARIAN SEMICONDUCTOR EQUIPMENT [US]

Inventor(s): KELLERMAN PETER L [US], CARLSON FREDERICK M [US], MORRELL DAVID [US], MORADIAN ALA [US] and others ...

Priority: 27.03.2014    US201414227006

Application: 17.03.2015    WO2015US20901

IPC Classification: C30B 15/20, C30B 29/06


3.  MANUFACTURING METHOD FOR β-GA2O3 SINGLE CRYSTAL LAYER, SAPPHIRE SUBSTRATE HAVING β-GA2O3 SINGLE CRYSTAL LAYER, FREE-STANDING β-GA2O3 SINGLE CRYSTAL AND MANUFACTURING METHOD THEREFOR

The present invention addresses the problem of providing an easy and low-cost manufacturing method for a β-Ga2O3 single crystal layer using vapor phase epitaxy, a sapphire substrate having a β-Ga2O3 single crystal layer, and a β-Ga2O3 free-standing single crystal, and a manufacturing method therefor. The problem can be solved by using a manufacturing method for a β-Ga2O3 single crystal layer characterized by using a single crystal substrate having a surface that has a similar atomic arrangement to the plane in which a β-Ga2O3 crystal epitaxially grows but is not rotationally symmetrical, and forming a β-Ga2O3 single crystal layer on the surface not having rotational symmetry. Also provided is a sapphire substrate having a β-Ga2O3 single crystal layer and a free-standing β-Ga2O3 single crystal and a manufacturing method therefor.

Publication: WO2015147101A1  Load Full Document from Espacenet (PDF)

Applicant(s): NAT INST FOR MATERIALS SCIENCE [JP]

Inventor(s): OSHIMA YUICHI [JP], GARCIA VILLORA ENCARNACION ANTONIA [JP], SHIMAMURA KIYOSHI [JP]

Priority: 25.03.2014    JP2014006248306.08.2014    JP20140160311

Application: 25.03.2015    WO2015JP59242

IPC Classification: C30B 29/16, C23C 14/08, C23C 16/40


4.  SINGLE-CRYSTAL SILICON CARBIDE SUBSTRATE, EPITAXIAL SILICON CARBIDE SUBSTRATE, AND PROCESSES FOR PRODUCING SAID SUBSTRATES

A single-crystal silicon carbide substrate (1) which includes a first main surface (1b) and a second main surface (1a) on the reverse side from the first main surface (1b). The first main surface (1b) has a maximum diameter of 100 mm or larger. The first main surface (1b) includes a first central region (IRb), which is the first main surface (1b) excluding a region (ORb) extending from the periphery to 3 mm inward therefrom. When the first central region (IRb) is divided into first square regions in each of which each side has a length of 250 [mu]m, the first square regions each have an arithmetic average roughness (Sa) less than 0.2 nm and have an oxygen concentration of 5 at.% or higher but less than 20 at.%. Thus, a single-crystal silicon carbide substrate and an epitaxial silicon carbide substrate which are effective in reducing the occurrence of vacuum holding failures are provided, and processes for producing the substrates are provided.

Publication: WO2015146320A1  Load Full Document from Espacenet (PDF)

Applicant(s): SUMITOMO ELECTRIC INDUSTRIES [JP]

Inventor(s): HONKE TSUBASA [JP], OKITA KYOKO [JP]

Priority: 28.03.2014    JP20140068308

Application: 09.02.2015    WO2015JP53509

IPC Classification: C30B 29/36, B24B 37/10, C23C 16/42, C30B 25/20, H01L 21/205, H01L 21/304


5.  METHOD FOR GROWING PARALLEL ELONGATE ELEMENTS (NANOWIRES, MICROWIRES) FROM A SUBSTRATE COMPRISING, FOR EACH ELONGATE ELEMENT, A SEED FORMED IN A CAVITY OF A NUCLEATION LAYER OR A NUCLEATION PAD

The invention relates to a method for growing an elongate element (5), in particular a wire such as a nanowire or microwire, which comprises the following steps: forming a nucleation surface (3) having at least one germination site adopting the shape of a germination cavity (7) and at least partially defined by a mask (2), said at least one germination cavity (7) being spaced apart from the mask (2); nucleating a seed (4) intended for taking part in the growth of said elongate element (5) on said at least one germination cavity (7); and growing said elongate element (5) from said seed (4).

Publication: WO2015144602A1  Load Full Document from Espacenet (PDF)

Applicant(s): COMMISSARIAT ENERGIE ATOMIQUE [FR]

Inventor(s): HYOT BÉRANGÈRE [FR]

Priority: 27.03.2014    FR20140052629

Application: 20.03.2015    WO2015EP56011

IPC Classification: C30B 25/18, C30B 29/40


6.  CRUCIBLE, PROCESS FOR MANUFACTURING THE CRUCIBLE, AND PROCESS FOR MANUFACTURING A CRYSTALLINE MATERIAL BY MEANS OF SUCH A CRUCIBLE

The invention relates to a crucible (1) for the formation of a crystalline material by solidification by growth on seed, comprising a base (2), at least one side wall (3) orthogonal to the base (2) of the crucible (1), and means for representing the position of at least one seed intended to be positioned at the base of the crucible, said seed comprising at least first and second faces orthogonal to the base of the crucible. The representation means comprise at least two markers (4) that extend over the inner face of the at least one side wall (3) along an axis orthogonal to the base of the crucible (1). The respective positions of at least two of the markers on at least one of the side walls (3) define, in the crystalline material, a first cutting plane tangent to the first face of said seed and a second cutting plane tangent to the second face of said seed.

Publication: WO2015150681A1  Load Full Document from Espacenet (PDF)

Applicant(s): COMMISSARIAT L EN ATOMIQUE ET AUX EN ALTERNATIVES [FR]

Inventor(s): CHAVRIER DENIS [FR], GARANDET JEAN-PAUL [FR], PIHAN ETIENNE [FR]

Priority: 31.03.2014    FR20140000784

Application: 30.03.2015    WO2015FR50818

IPC Classification: C30B 33/06


7.  COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR WAFER USING SAME

A composite substrate (1) comprises a support substrate (11) with a thermal conductivity at 1050 DEG C of 3Wm-1 DEG C-1 to 20Wm-1 DEG C-1 and a semiconductor film (13) disposed on the principal surface (11m) side of the support substrate (11) and having a thickness of at least 10 [mu]m. The ratio between the mean coefficient of thermal expansion of the support substrate (11) from 25 DEG C to 800 DEG C in a direction parallel to the principal surface (11m) to the mean coefficient of thermal expansion of the semiconductor film (13) from 25 DEG C to 800 DEG C in the direction parallel to the principal surface (13m) is greater than 0.9 and less than 1.1. Due to this configuration, a composite substrate favorable for the efficient manufacture of high-quality semiconductor wafers with low warpage is provided, and so is a method for manufacturing a semiconductor wafer using this composite substrate.

Publication: WO2015146978A1  Load Full Document from Espacenet (PDF)

Applicant(s): SUMITOMO ELECTRIC INDUSTRIES [JP]

Inventor(s): SATOH ISSEI [JP], YAMAMOTO YOSHIYUKI [JP], HASEGAWA MASATO [JP], TSUJI YUTAKA [JP] and others ...

Priority: 25.03.2014    JP20140061862

Application: 24.03.2015    WO2015JP58910

IPC Classification: C30B 25/18, C30B 29/38


8.  METHOD FOR REMOVING WORK-AFFECTED LAYER ON SIC SEED CRYSTAL, SIC SEED CRYSTAL, AND SIC SUBSTRATE MANUFACTURING METHOD

Provided is a method in which growth speed does not decrease even when a cut SiC seed crystal is used in performing MSE. A SiC seed crystal that is used as a seed crystal in metastable solvent epitaxy (MSE) is heated in a Si atmosphere and the surface of said SiC seed crystal is etched in order to remove a work-affected layer that was formed by cutting. Work-affected layers generated on SiC seed crystals are known to inhibit growth during MSE, and therefore removing the work-affected layers can prevent a decrease in growth speed.

Publication: WO2015151412A1  Load Full Document from Espacenet (PDF)

Applicant(s): TOYO TANSO CO [JP]

Inventor(s): YABUKI NORIHITO [JP], TORIMI SATOSHI [JP], NOGAMI SATORU [JP]

Priority: 31.03.2014    JP20140074742

Application: 10.03.2015    WO2015JP01302

IPC Classification: C30B 33/12, C30B 19/04, C30B 29/36


9.  APPARATUS FOR CONTINUOUSLY SUPPLYING INGOT RAW MATERIAL

The present invention relates to an apparatus for continuously supplying an ingot raw material, for enabling a fixed amount of a raw material to be continuously supplied using a raw material supply roller which is forwardly/reversely rotated in a predetermined section by a driving source and a power transfer means, and for continuously supplying a fixed amount of an ingot growing raw material. The apparatus for continuously supplying an ingot raw material comprises: a hopper (22) into which a great quantity of an ingot raw material (21) is inserted; an auxiliary hopper (24) which is downwardly elastically supported by a spring (23) at the lower portion of the hopper (22); a raw material supply roller (26) which is axially installed at the lower portion of the auxiliary hopper (24) and which comes into surface contact with the lower surface (25) of the auxiliary hopper (24); a supply hole (27) formed at the raw material supply roller (26); a servo motor (27) and a power transfer means (28) for ...

Publication: WO2015163505A1  Load Full Document from Espacenet (PDF)

Applicant(s): TECH CO LTD S [KR]

Inventor(s): PARK JIN SUB [KR], KIM JIN NO [KR], LEE KYUNG SEOK [KR], LEE JAE SIK [KR] and others ...

Priority: 25.04.2014    KR20140050006

Application: 25.04.2014    WO2014KR03652

IPC Classification: C30B 15/00, C30B 29/06


10.  EPITAXIAL GROWTH SUBSTRATE PRODUCTION METHOD, EPITAXIAL GROWTH SUBSTRATE OBTAINED THEREBY, AND LIGHT-EMITTING ELEMENT USING SAME SUBSTRATE

The epitaxial growth substrate production method comprises forming over a base material (40) a film (30) comprising an organic solid (10) dispersed in a sol gel material film (64), and heating the base material (40) whereon the film (30) is formed to remove the organic solid (10), partially exposing the base material (40) surface. Such an epitaxial growth substrate having a relief pattern comprising a protruding portion (60) and a recessed portion (70) can be produced efficiently.

Publication: WO2015163315A1  Load Full Document from Espacenet (PDF)

Applicant(s): JX NIPPON OIL & ENERGY CORP [JP]

Inventor(s): TAKAHASHI MADOKA [JP], TORIYAMA SHIGETAKA [JP], SEKI TAKASHI [JP], NISHIMURA SUZUSHI [JP] and others ...

Priority: 25.04.2014    JP20140091236

Application: 21.04.2015    WO2015JP62089

IPC Classification: C30B 25/18, H01L 33/22, H01L 33/32


11.  METHOD FOR EPITAXIALLY GROWING ULTRATHIN ORGANIC CRYSTALLINE LAYERS ON SURFACE AND ITS APPLICATIONS

Disclosed is a method for depositing ultrathin layers of an organic semiconductor material on a support, and its applications in fabrication of electronic devices like OEFT and diodes. In the method, a source of an organic semiconductor material and a support are spaced from each other in a vacuum chamber and subjected to a temperature gradient, and the epitaxy initiates due to a van der Waals interaction between the organic molecules and the support. The ultrathin crystalline layers of the organic semiconductor material can be only a-few-molecule thick and even one-molecule thick in total. Further disclosed is a layered structure produced by said method and use of the layered structure in fabrication of logic gates.

Publication: WO2015154238A1  Load Full Document from Espacenet (PDF)

Applicant(s): UNIV NANJING [CN], NIPPON KAYAKU KK [JP]

Inventor(s): WANG XINRAN [CN], SHI YI [CN], LI YUN [CN], SADAMITSU YUICHI [JP] and others ...

Priority: 09.04.2014    WO2014CN74947

Application: 09.04.2014    WO2014CN74947

IPC Classification: C30B 29/54, C30B 23/06


12.  HIGH PRESSURE REACTOR FOR SUPERCRITICAL AMMONIA AND METHOD FOR PRODUCING CRYSTALLINE GROUP III NITRIDE

A high-pressure cylindrical reactor suitable for a high-pressure process using supercritical ammonia to form bulk crystals of group III nitride or transition metal nitride is disclosed. In one instance, the reactor has a reactor body and lid formed of precipitation hardenable Ni-Cr superalloy and is sealed by a gasket made of Ni-based metal. Ni content of the gasket is greater than Ni content of both the reactor body and lid. The gasket is tapered so that its thickest part is at or near the gasket's inner radius or circumference, and the thinnest part of the gasket is more than 0.2 inch thick and is at or near the gasket's outer radius or circumference. The gasket's surfaces are compressed at 60,000 psi or higher. This construction provides a consistent seal of the reactor for repeated use.

Publication: WO2015153737A1  Load Full Document from Espacenet (PDF)

Applicant(s): SIXPOINT MATERIALS INC [US], SEOUL SEMICONDUCTOR CO LTD [KR]

Inventor(s): HASHIMOTO TADAO [US]

Priority: 01.04.2014    US201461973359P

Application: 01.04.2015    WO2015US23843

IPC Classification: C30B 7/10, B01J 3/00, B01J 3/03, B01J 3/04, B01J 19/02, C30B 29/40, F16J 15/08


13.  METHOD FOR PRODUCING SIC SINGLE CRYSTAL

The purpose of the present invention is to produce a high-quality SiC single crystal with good reproducibility while avoiding the fluctuations in the solution-contacting position of a seed crystal among production operations. A method for producing a SiC single crystal by bringing a SiC seed crystal supported by a supporting bar into contact with a solution that has been heated by high-frequency induction to thereby grow the SiC single crystal, wherein the supporting bar is born down while applying a magnetic field to the solution to thereby bring the SiC seed crystal into contact with the solution, and subsequently the application of the magnetic field is halted to grow the SiC single crystal.

Publication: US2015299900A1  Load Full Document from Espacenet (PDF)

Applicant(s): DAIKOKU HIRONORI [US], SAKAMOTO HIDEMITSU [JP], KADO MOTOHISA [US], KUSUNOKI KAZUHIKO [JP], TOYOTA MOTOR CO LTD [JP]

Inventor(s): DAIKOKU HIRONORI [JP], SAKAMOTO HIDEMITSU [JP], KADO MOTOHISA [JP], KUSUNOKI KAZUHIKO [JP] and others ...

Priority: 27.12.2012    JP2012028624511.11.2013    WO2013JP80427

Application: 11.11.2013    US201314648027

IPC Classification: C30B 30/04, C30B 19/04, C30B 19/06, C30B 19/12, C30B 29/36


14.  FIXED CUTTER DRILL BIT CUTTER ELEMENTS INCLUDING HARD CUTTING TABLES MADE FROM CVD SYNTHETIC DIAMONDS

Systems and methods of forming components from CVD single crystal diamonds that can withstand high temperatures and pressures, for example, in a mining and/or drilling environment. This may be accomplished by transforming a graphite powder by hot-filament chemical vapor deposition (HFCVD) into a CVD single diamond crystal powder, growing a plurality of CVD single diamond crystals on a planar surface of a substrate or on a dowel. In one example, if a substrate is used as the growth surface, the plurality of CVD single crystals grow in at least one layer on the substrate and at least a portion of the plurality of CVD single diamond crystals are removed from the substrate in the form of a plurality of discrete intact sheets of CVD single diamond crystals, stacked in a mold, and sintered, for example, to form a CVD single crystal diamond table.

Publication: US2015299901A1  Load Full Document from Espacenet (PDF)

Applicant(s): NAT OILWELL DHT LP [US]

Inventor(s): ZHAN II GUODONG [US], NIXON MICHAEL SCOTT [US]

Priority: 18.11.2013    US20131444350221.11.2012    US201261728920P18.11.2013    WO2013US70512

Application: 18.11.2013    US201314443502

IPC Classification: C30B 33/06, B24D 18/00, B24D 99/00, C30B 25/10, C30B 29/04, E21B 10/42, E21B 10/55


15.  SUBSTRATE FOR EPITAXIAL GROWTH, MANUFACTURING METHOD THEREFOR, AND SUBSTRATE FOR SUPERCONDUCTING WIRE

An objective of the present invention is to provide a copper substrate for epitaxial growth, which has higher biaxial crystal orientation, and a method for manufacturing the same. The substrate for epitaxial growth of the present invention contains a biaxially crystal-oriented copper layer, wherein the full width at half maximum [Delta][phi] of a peak based on the pole figure of the copper layer is within 5 DEG and the tail width [Delta][beta] of the peak based on the pole figure is within 15 DEG Such a substrate for epitaxial growth is manufactured by a 1st step of performing heat treatment of a copper layer so that [Delta][phi] is within 6 DEG and the tail width [Delta][beta] is within 25 DEG , and after the 1st step, a 2nd step of performing heat treatment of the copper layer at a temperature higher than the temperature for heat treatment in the 1st step, so that [Delta][phi] is within 5 DEG and the tail width [Delta][beta] is within 15 DEG .

Publication: US2015299899A1  Load Full Document from Espacenet (PDF)

Applicant(s): TOYO KOHAN CO LTD [JP], SUMITOMO ELECTRIC INDUSTRIES [JP]

Inventor(s): KOSHIRO TAKASHI [JP], OKAYAMA HIRONAO [JP], KUROKAWA TEPPEI [JP], NANBU KOUJI [JP] and others ...

Priority: 05.10.2012    JP2012022318723.08.2013    WO2013JP72520

Application: 23.08.2013    US201314432827

IPC Classification: C30B 29/22, C22C 9/00, C22F 1/08, C30B 1/04, C30B 23/02, C30B 25/18, H01B 12/06, H01B 13/00, H01L 39/12, H01L 39/24


16.  METHODS FOR PRODUCING RECTANGULAR SEEDS FOR INGOT GROWTH

A method of producing rectangular seeds for use in semiconductor or solar material manufacturing includes connecting an adhesive layer to a top surface of a template, the template including a plurality of parallel slots, and drawing alignment lines on the adhesive layer, the alignment lines aligned with at least some of the parallel slots. The method also includes connecting quarter sections to the adhesive layer such that an interface between a rectangular seed portion and a curved wing portion of each quarter section is aligned with at least one of the alignment lines drawn on the adhesive layer, and slicing each of the quarter sections to separate the rectangular seed portions from the curved wing portions.

Publication: US2015308011A1  Load Full Document from Espacenet (PDF)

Applicant(s): MEMC SINGAPORE PTE LTD UEN200614794D [SG]

Inventor(s): CHEN JIHONG JOHN [US], DWYER SUSAN S [US], HAYES SHAWN WESLEY [US], DOANE THOMAS E [US] and others ...

Priority: 09.07.2015    US20151479552231.12.2012    US201213731528

Application: 09.07.2015    US201514795522

IPC Classification: C30B 11/14, C30B 29/06, C30B 33/06, H01L 21/02


17.  SUSCEPTOR PROCESSING METHOD AND SUSCEPTOR PROCESSING PLATE

A susceptor processing method according to an embodiment includes: placing a plate on a susceptor arranged in a film forming chamber; heating the susceptor in order to have a temperature higher than that of the plate by using a main heater arranged below the susceptor and an auxiliary heater arranged in an upper part of the film forming chamber, and subliming a SIC film having been formed on a surface of the susceptor and adhering the sublimed SIC on the plate; and transporting the plate from the film forming chamber, the plate having SIC adhered thereon.

Publication: US2015299898A1  Load Full Document from Espacenet (PDF)

Applicant(s): NUFLARE TECHNOLOGY INC [JP]

Inventor(s): ITO HIDEKI [JP], TSUCHIDA HIDEKAZU [JP], KAMATA ISAHO [JP], ITO MASAHIKO [JP] and others ...

Priority: 16.04.2014    JP20140084467

Application: 02.04.2015    US201514677410

IPC Classification: C30B 25/12, C30B 23/02, C30B 29/36


18.  SIC SINGLE CRYSTAL, SIC WAFER, SIC SUBSTRATE, AND SIC DEVICE

A SiC single crystal includes, in a plane substantially parallel to a c-plane thereof, a region (A) in which edge dislocations having a Burgers vector (A) in a specific direction are unevenly distributed, and a region (B) in which basal plane dislocations having a Burgers vector (B) in a specific direction are unevenly distributed. The region (A) is located in a <1-100> direction with respect to a facet portion, while the region (B) is located in a <11-20> direction with respect to the facet portion. A SiC substrate is produced by cutting a SiC wafer from the SiC single crystal in a direction substantially parallel to the c-plane, and cutting the SiC substrate from the SiC wafer such that the SiC substrate mainly contains one of the region (A) and the region (B). A SiC device is fabricated using the SiC substrate.

Publication: US2015308014A1  Load Full Document from Espacenet (PDF)

Applicant(s): TOYOTA CHUO KENKYUSHO KK [JP], DENSO CORP [JP], SHOWA DENKO KK [JP]

Inventor(s): GUNJISHIMA ITARU [JP], KANZAWA YUSUKE [JP], URAKAMI YASUSHI [JP], KOBAYASHI MASAKAZU [JP] and others ...

Priority: 20.02.2013    JP2013003155407.02.2014    WO2014JP00650

Application: 07.02.2014    US201414650169

IPC Classification: C30B 29/36, C30B 23/02, C30B 29/64, H01L 29/16


19.  METHOD FOR FORMING AN EPITAXIAL SILICON LAYER

The invention relates to a method for forming a crystallised silicon layer having a crystallite size higher than or equal to 100 [mu]m, by the epitaxial growth in a vapour phase, on the surface of at least one silicon substrate, including at least the steps: (i) providing a silicon substrate having a particle size higher than or equal to 100 [mu]m and including a metal impurities content of between 0 ppb and 1 ppm by weight; and (ii) forming the silicon layer on the surface of the substrate heated to a temperature of between 1000 and 1300 DEG C., by decomposition of at least one silicon precursor by unit of an inductive plasma torch, the surface of the substrate for supporting the silicon layer being positioned close to the outlet of the plasma torch in step (ii).

Publication: US2015299897A1  Load Full Document from Espacenet (PDF)

Applicant(s): COMMISSARIAT ENERGIE ATOMIQUE [FR]

Inventor(s): BENMANSOUR MALEK [FR], GARANDET JEAN-PAUL [FR], MORVAN DANIEL [FR]

Priority: 24.09.2012    FR2012005891323.09.2013    WO2013IB58770

Application: 23.09.2013    US201314430800

IPC Classification: C30B 25/10, C30B 29/06


20.  HIGH PRESSURE APPARATUS AND METHOD FOR NITRIDE CRYSTAL GROWTH

A high pressure apparatus and related methods for processing supercritical fluids are disclosed. In certain embodiments, the present apparatus includes a capsule, a heater, at least one ceramic ring or multiple rings, optionally, with one or more scribe marks and/or cracks present. In certain embodiments, the apparatus has a metal sleeve containing each ceramic ring. The apparatus also has a high strength enclosure, end flanges with associated insulation, and a power control system. In certain embodiments, a high pressure apparatus is constructed such that the diametric annular gap between the outer diameter of the heater and the ceramic ring is selected to provide radial load-bearing contact above a particular temperature and pressure. In certain embodiments, the apparatus is capable of accessing pressures of 0.2 GPa to 2 GPa and temperatures of 400 DEG C. to 1200 DEG C.

Publication: US9157167B1  Load Full Document from Espacenet (PDF)

Applicant(s): PAKALAPATI RAJEEV T [US], D EVELYN MARK P [US], SORAA INC [US]

Inventor(s): PAKALAPATI RAJEEV T [US], D EVELYN MARK P [US]

Priority: 23.07.2012    US20121355610504.01.2012    US20121334356305.06.2008    US20080133364

Application: 23.07.2012    US201213556105

IPC Classification: C30B 7/10


21.  METHOD OF PRODUCING FREE-STANDING NET-SHAPE SAPPHIRE

A method for producing one or more free-standing aluminum oxide windows or laminates by using a substrate of aluminum oxide and one or more sacrificial layers that each separates one or more deposited aluminum oxide layer. The sacrificial layer may be decomposed to producing one or more a free-standing aluminum oxide windows. The free-standing windows or laminates are substantially in finished form requiring little or no post growth processing. The produced windows or laminates may be hard, scratch resistant net-shaped sapphire ready for use in cell phones, electronic devices, a tablet computer, watches, glass applications, or the like.

Publication: US2015308013A1  Load Full Document from Espacenet (PDF)

Applicant(s): RUBICON TECHNOLOGY INC [US]

Inventor(s): CIRALDO JOHN P [US], LEVINE JONATHAN B [US]

Priority: 04.11.2014    US20141453238729.04.2014    US201461985790P

Application: 04.11.2014    US201414532387

IPC Classification: C30B 23/02, C30B 23/08, C30B 25/06, C30B 25/18, C30B 29/20, C30B 29/68


22.  METHOD FOR GROWING B-GA2O3 SINGLE CRYSTAL

A method for growing a [beta]-Ga2O3-based single crystal, can provide a plate-shaped [beta]-Ga2O3-based single crystal having high crystal quality. In one embodiment, a method for growing a [beta]-Ga2O3-based single crystal employing an EFG method is provided, the method including: bringing a plate-shaped seed crystal into contact with a Ga2O3-based melt, wherein the plate-shaped seed crystal includes a [beta]-Ga2O3-based single crystal having a defect density of not more than 5105/cm2 in the whole region; and pulling up the seed crystal to grow a [beta]-Ga2O3-based single crystal.

Publication: US2015308012A1  Load Full Document from Espacenet (PDF)

Applicant(s): TAMURA SEISAKUSHO KK [JP], KOHA CO LTD [JP]

Inventor(s): WATANABE SHINYA [JP], WAKIMOTO DAIKI [JP], IIZUKA KAZUYUKI [JP], KOSHI KIMIYOSHI [JP] and others ...

Priority: 07.11.2012    JP2012024535709.10.2013    WO2013JP77489

Application: 09.10.2013    US201314441376

IPC Classification: C30B 15/34, C30B 15/30, C30B 15/36, C30B 29/16


23.  METHOD FOR PRODUCING N-TYPE SIC SINGLE CRYSTAL

Provided is a method for producing an n-type SiC single crystal, whereby it is possible to grow an n-type SiC single crystal having a low resistivity at a high speed. A method for producing an n-type SiC single crystal by bringing a SiC seed crystal substrate into contact with a Si-C solution having such a temperature gradient that the temperature gradually decreases from the inside toward the surface, thereby achieving the crystal growth of the n-type SiC single crystal. The method involves adding a nitride to a raw material for forming the Si-C solution or to the Si-C solution.

Publication: US2015299896A1  Load Full Document from Espacenet (PDF)

Applicant(s): SHIRAI TAKAYUKI [US], TOYOTA MOTOR CO LTD [JP]

Inventor(s): SHIRAI TAKAYUKI [JP]

Priority: 28.12.2012    JP2012028823901.04.2013    WO2013JP59984

Application: 01.04.2013    US201314650664

IPC Classification: C30B 19/06, C30B 19/04, C30B 19/08, C30B 19/10, C30B 19/12, C30B 29/36


24.  SUSCEPTOR FOR EPITAXIAL GROWING AND METHOD FOR EPITAXIAL GROWING

The present disclosure relates to a susceptor for epitaxial growing, which is for manufacturing an epitaxial wafer made by performing a reaction of a wafer and a source gas inside a chamber and growing an epitaxial layer, comprising: a pocket provided with an opening on which the wafer is arranged; a ledge portion for supporting the wafer; and a gas control member positioned on the outer circumferential portion of the upper surface of the susceptor opening, wherein the gas control member comprises a first gas control member which is formed on a predetermined area opposite a crystalline direction of the wafer (110), a second gas control member which is formed on a predetermined area opposite the crystalline direction of the wafer (100), and a third gas control member which is formed between the first gas control member and the second gas control member, wherein the first gas control member, the second gas control member, and the third gas control member are formed so that the size of an area formed along the ...

Publication: US2015275395A1  Load Full Document from Espacenet (PDF)

Applicant(s): LG SILTRON INC [KR]

Inventor(s): KANG YU-JIN [KR]

Priority: 16.10.2012    KR2012011474311.10.2013    KR2013012157216.10.2013    WO2013KR09261

Application: 16.10.2013    US201314436425

IPC Classification: C30B 25/12, C30B 25/16, C30B 29/06, H01L 21/687


25.  HIGH PRESSURE SINGLE CRYSTAL DIAMOND ANVILS

A high pressure anvil is provided. The high pressure anvil includes a two-strata body including a first body grown by chemical vapor deposition and a second layer grown by an epitaxy deposition method.

Publication: US2015275396A1  Load Full Document from Espacenet (PDF)

Applicant(s): BOEHLER REINHARD [US], TSACH YARDEN [US]

Inventor(s): BOEHLER REINHARD [US], TSACH YARDEN [US]

Priority: 25.03.2015    US20151466819226.03.2014    US201461970483P

Application: 25.03.2015    US201514668192

IPC Classification: C30B 29/04, C30B 25/02


26.  SEED CRYSTAL FOR SIC SINGLE-CRYSTAL GROWTH, SIC SINGLE CRYSTAL, AND METHOD OF MANUFACTURING THE SIC SINGLE CRYSTAL

A seed crystal for SiC single-crystal growth includes a facet formation region containing a {0001}-plane uppermost portion and n (n>=3) planes provided enclosing the periphery of the facet formation region. The seed crystal for SiC single-crystal growth satisfies the relationships represented by formula (a): Bkk-1<=cos-1(sin(2.3 degrees)/sin Ck), formula (b): Bkk<=cos-1(sin(2.3 degrees)/sin Ck), and formula (c): min(Ck)<=20 degrees. In the formulas, Ck is an offset angle of a k-th plane, Bkk-1 is an angle defined by an offset downstream direction of the k-th plane and a (k-1)-th ridge line, and Bkk is an angle defined by the offset downstream direction of the k-th plane and a k-th ridge line.

Publication: US2015275397A1  Load Full Document from Espacenet (PDF)

Applicant(s): TOYOTA CHUO KENKYUSHO KK [JP], DENSO CORP [JP], SHOWA DENKO KK [JP]

Inventor(s): GUNJISHIMA ITARU [JP], SHIGETOH KEISUKE [JP], URAKAMI YASUSHI [JP], MATSUSE AKIHIRO [JP] and others ...

Priority: 19.11.2012    JP2012025376529.10.2013    WO2013JP06389

Application: 29.10.2013    US201314435335

IPC Classification: C30B 29/36, C30B 19/12, C30B 23/02, C30B 25/20


27.  CUBIC SILICON CARBIDE FILM MANUFACTURING METHOD, CUBIC SILICON CARBIDE FILM-ATTACHED SUBSTRATE MANUFACTURING METHOD, AND POWER DEVICE BY USE OF THE CUBIC SILICON CARBIDE FILM

A method for manufacturing a cubic silicon carbide film includes: a first step of introducing a carbon-containing gas onto a silicon substrate and rapidly heating the silicon substrate to an epitaxial growth temperature of cubic silicon carbide so as to carbonize a surface of the silicon substrate and form a cubic silicon carbide film; and a second step of introducing a carbon-containing gas and a silicon-containing gas onto the cubic silicon carbide film while maintaining the cubic silicon carbide film at the epitaxial growth temperature of cubic silicon carbide, so as to allow further epitaxial growth of the cubic silicon carbide film.

Publication: US2015275394A1  Load Full Document from Espacenet (PDF)

Applicant(s): SEIKO EPSON CORP [JP]

Inventor(s): WATANABE YUKIMUNE [JP]

Priority: 11.06.2015    US20151473728113.08.2010    JP2010018120625.07.2011    US201113189776

Application: 11.06.2015    US201514737281

IPC Classification: C30B 25/10, C30B 25/18, C30B 29/36


28.  DEFECT REDUCTION IN SEEDED ALUMINUM NITRIDE CRYSTAL GROWTH

Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density!<=100 cm-2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.

Publication: US2015275393A1  Load Full Document from Espacenet (PDF)

Applicant(s): BONDOKOV ROBERT T [US], SCHOWALTER LEO J [US], MORGAN KENNETH [US], SLACK GLEN A [US], RAO SHAILAJA P [US], GIBB SHAWN ROBERT [US]

Inventor(s): BONDOKOV ROBERT T [US], SCHOWALTER LEO J [US], MORGAN KENNETH [US], SLACK GLEN A [US] and others ...

Priority: 13.04.2015    US20151468475413.08.2014    US20141445882506.11.2012    US20121366963017.01.2008    US2008001595730.06.2011    US20111317321317.01.2007    US20070880869P30.06.2010    US20100360142P

Application: 13.04.2015    US201514684754

IPC Classification: C30B 23/02, C30B 23/06, C30B 25/10, C30B 25/12, C30B 25/18, C30B 29/40


29.  HIGH PRESSURE REACTOR FOR SUPERCRITICAL AMMONIA

A high-pressure cylindrical reactor suitable for a high-pressure process using supercritical ammonia to form bulk crystals of group III nitride or transition metal nitride is disclosed. In one instance, the reactor has a reactor body and lid formed of precipitation hardenable Ni-Cr superalloy and is sealed by a gasket made of Ni-based metal. Ni content of the gasket is greater than Ni content of both the reactor body and lid. The gasket is tapered so that its thickest part is at or near the gasket's inner radius or circumference, and the thinnest part of the gasket is more than 0.2 inch thick and is at or near the gasket's outer radius or circumference. The gasket's surfaces are compressed at 60,000 psi or higher. This construction provides a consistent seal of the reactor for repeated use.

Publication: US2015275391A1  Load Full Document from Espacenet (PDF)

Applicant(s): SIXPOINT MATERIALS INC [US], SEOUL SEMICONDUCTOR CO LTD [KR]

Inventor(s): HASHIMOTO TADAO [US]

Priority: 01.04.2015    US20151467628101.04.2014    US201461973359P06.04.2007    US2007078433907.04.2006    US20060790310P19.09.2007    US20070973602P25.10.2007    US2007097766125.02.2008    US20080067117P25.02.2009    US2009039296004.06.2008    US20080058900P04.06.2009    US2009045576004.06.2008    US20080058910P04.06.2009    US2009045568312.06.2008    US20080131917P12.06.2009    US2009045618116.10.2008    US20080106110P16.10.2009    US2009058084928.08.2012    US201261694119P25.09.2012    US201261705540P

Application: 01.04.2015    US201514676281

IPC Classification: C30B 7/10, C30B 29/40


30.  METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL

The invention provides a method of manufacturing an N-type silicon single crystal having a resistivity of 0.05 [Omega]cm or less and a crystal orientation of <100> by a Czochralski method, including: bringing a seed crystal into contact with a melt doped with a dopant in a crucible; forming a cone while adjusting a taper angle [theta] such that a ratio of the total of individual lengths of areas each having a taper angle [theta] ranging from 25 DEG to 45 DEG to length L of a cone side surface is 20% or less, where [theta] being formed between a growth direction of the silicon single crystal and the cone side surface when the cone is seen in a diameter direction of the silicon single crystal; and successively forming a straight body. The method can inhibit the generation of dislocations during the cone formation without reducing the yield and productivity.

Publication: US2015275392A1  Load Full Document from Espacenet (PDF)

Applicant(s): SHINETSU HANDOTAI KK [JP]

Inventor(s): SOETA SATOSHI [JP], NAKANO SHINJI [JP]

Priority: 11.12.2012    JP2012027056211.11.2013    WO2013JP06608

Application: 11.11.2013    US201314428901

IPC Classification: C30B 15/22, C30B 15/04, C30B 15/36, C30B 29/06, C30B 30/04


31.  METHOD FOR FORMING A DOPED SILICON INGOT OF UNIFORM RESISTIVITY

A method for forming a silicon ingot includes the following steps: providing a silicon ingot of variable electrical resistivity and containing interstitial oxygen, determining the interstitial oxygen concentration in different areas of the silicon ingot, calculating the concentration of thermal donors to be created in the different areas to reach a target value of the electrical resistivity, and subjecting the different areas of the silicon ingot to annealing so as to form the thermal donors. The annealing temperature in each area is determined from the thermal donor and interstitial oxygen concentrations of the area and from a predefined annealing time.

Publication: US2015284875A1  Load Full Document from Espacenet (PDF)

Applicant(s): COMMISSARIAT ENERGIE ATOMIQUE [FR], COMMISSARIAT I EN ATOMIQUE ET AUX EN ALTERNATIVES [FR]

Inventor(s): VEIRMAN JORDI [FR], DUBOIS SÉBASTIEN [FR], ENJALBERT NICOLAS [FR]

Priority: 23.10.2012    FR2012000282623.10.2013    WO2013FR00276

Application: 23.10.2013    US201314437955

IPC Classification: C30B 33/02, C30B 29/06, F27D 19/00, F27D 21/00


32.  CRYSTALLISATION AND CRYSTAL GROWTH

Disclosed is a method for facilitating preparation of high quality crystals suitable for X-ray crystallographic studies. The method comprises that an electric charge or current is provided to a saturated solution of the molecule to be crystallized, preferably via a jet of gaseous ions. Also disclosed is an assembly for carrying out the method of the invention.

Publication: US2015284874A1  Load Full Document from Espacenet (PDF)

Applicant(s): WMCS TECHNOLOGIES LTD [CN]

Inventor(s): IKONOMIDIS KYRIAKOS [GR], POULAS KONSTANTINOS [GR], TZIMAS IOANNIS [GR], WETLING JOHN F [DK] and others ...

Priority: 25.10.2013    US20131443844825.10.2012    EP2012018997225.10.2012    US201261718211P25.10.2013    WO2013EP72418

Application: 25.10.2013    US201314438448

IPC Classification: C30B 30/02, C12N 9/36, C30B 29/58


33.  CRYSTAL GROWTH APPARATUS AND THERMAL INSULATION COVER OF THE SAME

A crystal growth apparatus includes a crucible, a heating device, a thermal insulation cover, and a driving device. The crucible contains materials to be melted, wherein the heating device heats the crucible to melt the materials; the thermal insulation cover is provided upon the materials, wherein the thermal insulation cover includes a main body, which has a bottom surface facing an interior of the crucible, and a insulating member being provided at the main body; the driving device moves the thermal insulation cover towards or away from the materials, whereby, the thermal insulation cover effectively blocks heat conduction and heat convection, which prevents thermal energy from escaping out of the crucible.

Publication: US2015284876A1  Load Full Document from Espacenet (PDF)

Applicant(s): GLOBALWAFERS CO LTD [TW]

Inventor(s): CHUANG LU-CHUNG [TW], YU CHIH-CHIEH [TW], LAN WEN-CHIEH [TW], LI I-CHING [TW] and others ...

Priority: 03.04.2014    TW20140205818U

Application: 31.03.2015    US201514675220

IPC Classification: C30B 35/00


34.  MULTI-STAGE RAMP-UP ANNEALING FOR FREQUENCY-CONVERSION CRYSTALS

A frequency-conversion crystal annealing process includes a first ramp-up period (e.g., increasing the crystal's temperature to a first set point in the range of 100 DEG C. to 150 DEG C. over about 2 hours), a first fixed temperature period (e.g., maintaining at the first set point for 10 to 20 hours), a second ramp-up period (e.g., increasing from the first set point to a second set point above 150 DEG C. over about 1 hour or more), a second fixed period (e.g., maintaining at the second set point for 48 to 300 hours), and then a temperature ramp-down period (e.g., decreasing from the second set point to room temperature over about 3 hours). Transitions from the first and second fixed temperature periods are optionally determined by -OH bonds absorption levels that are measured using Fourier transform infrared spectroscopy, e.g., by monitoring the absorption of -OH bonds (including H2O) near 3580 cm-1 in the infra-red spectrum.

Publication: US2015299893A1  Load Full Document from Espacenet (PDF)

Applicant(s): KLA TENCOR CORP [US]

Inventor(s): DRIBINSKI VLADIMIR [US], CHUANG YUNG-HO ALEX [US], ARMSTRONG J JOSEPH [US]

Priority: 29.06.2015    US20151475327506.10.2014    US20141450775805.03.2012    US20121341256422.07.2011    US201161510633P

Application: 29.06.2015    US201514753275

IPC Classification: C30B 1/02, C30B 29/14, C30B 29/22, C30B 29/30, G02F 1/355


35.  STIRRING APPARATUS OF INGOT CASTING FURNACE

A stirring apparatus of an ingot casting furnace includes a rotating shaft and at least one fin. The fin is provided onto the rotating shaft, and has a first edge, a second edge of unequal length provided correspondingly, and a third edge connecting the first and the second edges. The rotating shaft can be driven to rotate, which consequently drives the at least one fin to stir materials in a crucible. The length of the first edge is different from that of the second edge in order for the materials in the crucible can be mixed with dopants more uniformly during the stirring process to produce ingots of stable quality.

Publication: US2015299895A1  Load Full Document from Espacenet (PDF)

Applicant(s): GLOBALWAFERS CO LTD [TW]

Inventor(s): CHUANG LU-CHUNG [TW], YU CHIH-CHIEH [TW], LAN WEN-CHIEH [TW], CHYAN JIUNN-YIH [TW] and others ...

Priority: 18.04.2014    TW20140206797U

Application: 11.04.2015    US201514684355

IPC Classification: C30B 11/00, C30B 11/06, C30B 29/06


36.  APPARATUS AND PROCESS FOR PRODUCING A SINGLE CRYSTAL OF SILICON

An apparatus for producing a single crystal of silicon comprises a plate with a top side, an outer edge, and an inner edge, a central opening adjoining the inner edge, and a tube extending from the central opening to beneath the bottom side of the plate; a device for metering granular silicon onto the plate; a first induction heating coil above the plate, provided for melting of the granular silicon deposited; a second induction heating coil positioned beneath the plate, provided for stabilization of a melt of silicon, the melt being present upon a growing single crystal of silicon. The top side of the plate consists of ceramic material and has elevations, the distance between the elevations in a radial direction being not less than 2 mm and not more than 15 mm.

Publication: US2015292109A1  Load Full Document from Espacenet (PDF)

Applicant(s): SILTRONIC AG [DE]

Inventor(s): BRENNINGER GEORG [DE], STEIN WALDEMAR [DE], HAEBERLEN MAIK [DE]

Priority: 14.04.2014    DE201410207149

Application: 27.03.2015    US201514670477

IPC Classification: C30B 11/10, C30B 11/00, C30B 11/02, C30B 29/06


37.  METAL SINGLE CRYSTAL IN WHICH METAL ELEMENT IS SUBSTITUTED

The present invention relates to a metal single crystal in which a metal element is substituted, wherein a metal element A is doped with a metal element B different from the metal element A to form A1-XBX, and a mixed single crystal is formed therefrom by high temperature melting (wherein the metal element A is any one of silver, copper, platinum and gold; the metal element B is any one of silver, copper, platinum and gold; and 0.01!<=x!<=0.09). Therefore, a metal single crystal, which is a mixed crystal with more superior electrical properties than a conventional metal, is formed by doping a metal with excellent electrical properties with a metal element different from the metal, and growing the doped metal into a mixed crystal.

Publication: US2015292113A1  Load Full Document from Espacenet (PDF)

Applicant(s): BUSAN NAT UNIVERSITY IND UNIVERSITY COOPERATION FOUNDATION [KR]

Inventor(s): JEONG SE-YOUNG [KR], KIM JI-YOUNG [KR], CHO YONG-CHAN [KR], PARK SANG-EON [KR] and others ...

Priority: 21.09.2012    KR2012010513317.09.2013    WO2013KR08381

Application: 17.09.2013    US201314430312

IPC Classification: C30B 29/52, C22C 5/08, C30B 15/00, C30B 29/02


38.  AN APPARATUS AND METHOD FOR GROWING A BULK SINGLE CRYSTAL NITRIDE MATERIAL

An apparatus and method for growing nitride bulk single crystal, including an autoclave having a pre-growth zone and a growth zone. With control of the concentration of a saturated solution in a pre-growth chamber, the oversaturation reaction conditions for the overall process of growth of the nitride bulk single crystal can be regulated. By regulating the liquid level difference of the melt on an upper surface of a seed crystal, nucleation growth of N/Ga is preferentially performed on the surface of the seed crystal, which suppresses polycrystal formation at a gas-liquid interface and improves the growth rate of crystal and the utilization rate of raw materials.

Publication: US2015292108A1  Load Full Document from Espacenet (PDF)

Applicant(s): DONGGUAN INSITUTE OF OPTO ELECTRONICS PEKING UNIVERSITY [CN]

Inventor(s): LIU NANLIU [CN], LIANG ZHIWEN [CN], CHEN JIAO [CN], ZHANG GUOYI [CN] and others ...

Priority: 22.10.2013    CN2013149809909.07.2014    WO2014CN81877

Application: 09.07.2014    US201414647835

IPC Classification: C30B 7/10, C30B 29/40


39.  III-NITRIDE BASED SEMICONDUCTOR STRUCTURE

The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.

Publication: US2015287792A1  Load Full Document from Espacenet (PDF)

Applicant(s): INT RECTIFIER CORP [US]

Inventor(s): WEEKS JR T WARREN [US], PINER EDWIN L [US], GEHRKE THOMAS [US], LINTHICUM KEVIN J [US] and others ...

Priority: 18.06.2015    US20151474321805.08.2014    US20141445220319.11.2013    US20131408392327.12.2012    US20121372895627.01.2012    US20121335989224.12.2008    US2008034361630.09.2003    US2003067579814.12.2000    US20000736972

Application: 18.06.2015    US201514743218

IPC Classification: C30B 29/38, H01L 29/20, C23C 16/34, C30B 23/02, C30B 25/02, C30B 25/18, H01L 21/20, H01L 21/205, H01L 29/15, H01L 29/201, H01L 29/205, H01L 29/778, H01L 33/00, H01L 33/06, H01L 33/12, H01L 33/32, H01S 5/323, H01S 5/343


40.  HEXAGONAL DIAMOND SINGLE PHASE BULK SINTERED BODY AND METHOD OF MANUFACTURING THE SAME

A method capable of obtaining pure single phase hexagonal diamond in an industrially usable size (bulk) is provided. Highly oriented and highly crystallized graphite having a mosaic spread of 5 DEG or less is used as a starting material, and is subjected to a temperature ranging from 1000 to 1500 DEG C. at a pressure ranging from 20 to 25 GPa. The size of the bulk sintered body of pure single-phase hexagonal diamond obtained by this method depends on the size of the starting graphite. However, as long as the pressure and temperature can be entirely provided (i.e., as long as the adequate high pressure and temperature are applied to the sample chamber of high pressure apparatus), any desired size can be obtained.

Publication: US2015292107A1  Load Full Document from Espacenet (PDF)

Applicant(s): NAT UNIV CORP EHIME UNIV [JP]

Inventor(s): OHFUJI HIROAKI [JP], IRIFUNE TETSUO [JP]

Priority: 16.08.2012    JP2012018042706.02.2013    WO2013JP52768

Application: 06.02.2013    US201314421690

IPC Classification: C30B 1/12, C30B 29/04